emitter-base breakdown voltage что это

 

 

 

 

"Emitter Base Voltage" is the maximum voltage that may be applied when the base-emitter diode is in reverse not conducting.Edit: see also Wikipedia on the difference between avalanche and Zener breakdown. Min typ max. Unit. Collector-base breakdown voltage V(BR)CBO.Emitter-base breakdown voltage. V(BR)EBO. Collector cut-off current. The common emitter breakdown voltage as characterized by the open base breakdown voltage, VBCEO, is therefore significantly less than the open emitter breakdown voltage, VBCBO. Collector Current (A). Emitter-base breakdown voltage. V(BR)EBO. Collector cut-off current.DC current gain(note). HFE1 HFE2. Collector-emitter saturation voltage VCE(sat). But is Emitter-base breakdown voltage good? Is the what causes the trasistor to "switch on". Or is Emitter Base breakdown with electricity flows backwards through the emitter to the base and "fries" it? with 2 < n < 6 Vr: the reverse voltage applied across the junction Bv: the breakdown voltage. In the common Base configuration, the breakdown due to the impact ionization (avalanching) gives a well defined voltage as depicted in Figure 3a, the effect of the current coming from the emitter having little В даташите на транзистор сказано, что "Emitter to base voltage" максимум может быть 7 В. Что это значит?Речь, по-видимому, идет об ОБРАТНОМ напряжении база-эмиттер. Emitter. Figure 2 IGBT Simplified Equivalent Circuits. The first circuit shows an N-channel power MOSFET driving a wide base PNP bipolar transistor in a Darlington configuration. Reverse Collector-Emitter Breakdown Voltage.

MAX. UNIT. Collector-base breakdown voltage.

V(BR). CBO.25. V. Emitter-base breakdown voltage. 1.emitter 2.collector 3. base. MAXIMUM RATINGS (TA25 unless otherwise noted). Symbol VCBO VCEO VEBO IC PC TJ Tstg. 123. ELECTRICAL CHARACTERISTICS (Tamb25 unless otherwise specified). Parameter Collector- base breakdown voltage Collector-emitter Breakdown voltage with Base open. As discussed earlier, due to the requirement of zero base current, the holes generated in the collector depletion region have nowhere to flow but the emitter. Emitter-base breakdown voltage. ta. Collector cut-off current. a.Collector-emitter saturation voltage. w. Transition frequency. Вы найдете лучшие идеи на тему Emitter base breakdown voltage что значит на этой странице. Смотрите видео и смело действуйте! ELECTRICAL CHARACTERISTICS Characteristics. Collector-Emitter Breakdown Voltage (IC -1.0 mAdc, IB0).Base-Emitter Saturation Voltage. Emitter-base breakdown voltage.Base-emitter saturation voltage Transition frequency Collector output capacitance Fall time Storage time. CLASSIFICATION OF hFE(1). Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature. Vcbo vceo vebo. IC PC RJA TJ, TSTG. Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range.Emitter-Base Breakdown Voltage. IE -10 A, IC 0. Emitter-base breakdown voltage Collector cut-off current. V(BR)EBO ICBO.Emitter cut-off current. IEBO. DC current gain. HFE 1. Collector-emitter saturation voltage VCE(sat). L. Collector current ICM : -800 mA Collector-base voltage. O. V(BR)CBO : -120 V Operating and storage junction temperature range.Emitter-base breakdown voltage. R. Collector cut-off current. The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to become electrically conductive. For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. The breakdown voltage ratings of a transistor are the maximum voltages that a transistor can handle for each of its 3 junctions.The voltage rating, VEBO, is the maximum allowable emitter-base voltage with the collector open. Breakdown in the opposite direction (e.g. NPN: V to Emitter, Collector grounded) is roughly equivalent to the breakdown between the Emitter and Base. Typically this is between 5 to 7V, making the Collector- Emitter reverse voltage less than 5V. Collector-emitter breakdown voltage. Emitter-base breakdown voltage. R. Collector cut-off current. It has, however, the rather low base-emitter breakdown voltage of about 7 V in reverse biased operation. To utilize a transistor as diode (may be meaningful e. g. to reduce the type count on a PCB), you should better use the collector- base diode () Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous. PC Collector Power Dissipation.ELECTRICAL CHARACTERISTICS (Tamb25 unless otherwise specified). Parameter Collector- base breakdown voltage Collector-emitter Collector-emitter breakdown voltage is the VC at which a specified IC flows, with the base open. Since its the reverse current across a junction, IC exhibits a knee shaped rise, increasing rapidly once breakdown occurs. Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature. Vcbo vceo vebo. IC Pc tj, tstg. Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction ELECTRICAL CHARACTERISTICS (Ta25 unless otherwise specified). Parameter Collector- base breakdown voltage 600mA) High voltage(max.180V). MAXIMUM RATINGS (TA25 unless otherwise noted). Symbol VCBO VCEO VEBO IC PC Tj Tstg.Parameter. Symbol Test conditions. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Метод измерения пробивного напряжения коллектор-база (эмиттер-база) при нулевом токе эмиттера (коллектора).Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current. This will create a greater breakdown voltage for the Collector-Emitter part compared to Base-Emitter part(which is roughly 0.7 Volts for Silicon). Emitter-base breakdown voltage. V(BR)EBO. Collector cut-off current.Parameter. Symbol Test conditions. Collector-base breakdown voltage V(BR)CBO. Emitter-base breakdown voltage Collector cut-off current. V(BR)EBO ICBO.Emitter cut-off current. IEBO. DC current gain. HFE 1. Collector-emitter saturation voltage VCE(sat). at -VCB35V Emitter Cutoff Current. at -VBE6V Collector Saturation Voltage.at -IC100A Emitter Base Breakdown Voltage. Test conditions. Min max unit. Collector-base breakdown voltage. V(BR)CBO. Ic 1000 A IE0. 60. V. Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current. DC current gain. Characteristic. Symbol. Test Conditions. Collector-Base Breakdown Voltage Collector- Emitter Breakdown Voltage. BVCBO BVCEO. where BVcbo is collector to base breakdown voltages with emitter open circuited.Due to reduction in voltage gain the allowable input signal excursion is large than the one without emitter resistance before the amplifier enters into nonlinear regime. 1. base 2. collector 3. emitter. 1 23. ELECTRICAL CHARACTERISTICS (Tamb25 unless otherwise specifie).Base-emitter saturation voltage. Transition frequency. Collector output capacitance. MAXIMUM RATINGS TA25 unless otherwise noted. Symbol VCBO VCEO VEBO IC PC TJ Tstg. Parameter Collector-Base Voltagevoltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current. 400V/7A Switching Regulator Applications. Features. High breakdown voltage, high reliability. High-speed switching (t. f.Base-to-Emitter Saturation Voltage. The breakdown voltage between the collector and emitter terminals when the collector terminal is biased in the reverse direction with respect to the emitter terminal, and the base terminal is, respectively If the emitter to base voltage exceeds the breakdown voltage the resulting current will permanently damage the transistor by reducing the current gain.

He tried running the Joule Thief with no LED for hours and he said the results were that it did not harm the transistor. Collector-emitter voltage (open base) постоянное напряжение коллектор- эмиттер при токе базы равном нулю Uкэо.CollectorEmitter Breakdown Voltage - дословный перевод : - напряжение поломки - напряжение аварии Emitter-base breakdown voltage. R. Collector cut-off current.Collector-emitter saturation voltage. Symbol VCBO VCEO VEBO ICBO ICEO IEBO. hFE(1). Collector-Base Voltage Collector-Emitter Voltage. 300 V 300 V. VEBO IC PC.Symbol Test conditions. MIN TYP. Collector-base breakdown voltage Collector- emitter breakdown voltage. For thicker bases, avalanche breakdown occurs at voltages smaller than Vpth. SDM 2, Michael Shur 1999-2009. 14.(open base). Collector-emitter breakdown voltage. BVce. BV c b. Метод измерения пробивного напряжения коллектор-база (эмиттер-база) при нулевом токе эмиттера (коллектора).Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current. Negative base current/base-emitter voltage turns BJT off. So-called reverse bais operation. Extra carriers at CB junction increase likelyhood of impact ionization at lower voltages , thus decreasing breakdown voltage. SOT-89. 1. base. 2. collector 3. emitter. 1 2 3. ELECTRICAL CHARACTERISTICS (Tamb25 unless otherwise specified). Parameter Collector- base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Пробивное напряжение эмиттер база D. Emitter Basis Durchbruchspannung E. Breakdown emitter base voltage F. Tension de claquage metteur base UЭБОпроб Пробивное напряжение, измеряемое между выводами эмиттера и базы, при заданном обратном токе

Недавно написанные: